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BTD6055M3 - NPN Epitaxial Planar High Current Transistor

Features

  • Low VCE(SAT).
  • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A.
  • Low operating collector voltage.
  • Excellent current gain characteristics at very low VCE.
  • Suitable for low dropout voltage.

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Datasheet Details

Part number BTD6055M3
Manufacturer CYStech
File Size 236.21 KB
Description NPN Epitaxial Planar High Current Transistor
Datasheet download datasheet BTD6055M3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C659M3 Issued Date : 2008.06.25 Revised Date : Page No. : 1/6 NPN Epitaxial Planar High Current (High Performance) Transistor BTD6055M3 Features • Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low dropout voltage application • Pb-free package Symbol BTD6055M3 Outline SOT-89 B：Base C：Collector E：Emitter BB C CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Symbol VCBO VCEO VEBO IC ICP Power Dissipation Pd Operating and Storage Temperature Range Tj ; Tstg Note : 1.
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