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BTC2882J3 - General Purpose NPN Epitaxial Planar Transistor

Features

  • High breakdown voltage, BVCEO≥ 200V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Pb-free lead plating and halogen-free package Symbol BTC2882J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Sto.

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Datasheet Details

Part number BTC2882J3
Manufacturer CYStech
File Size 244.41 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2882J3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2882J3 BVCEO IC RCESAT(MAX) Spec. No. : C238J3 Issued Date : 2010.06.23 Revised Date : 2011.03.08 Page No. : 1/6 200V 1A 0.
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