CEM2539 - Dual Enhancement Mode Field Effect Transistor

Product Overview

CET

Part number	CEM2539
Manufacturer	CET
File Size	565.96 KB
Description	Dual Enhancement Mode Field Effect Transistor
Datasheet	CEM2539 Datasheet
Additional preview pages of the CEM2539 datasheet.

20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 33mΩ @VGS = 2.5V. -20V, -4.0A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 8 5 G1.
1K G2 S1 D1 7 D2 6 D2 5 S2 1 S1 2 G1 3 S2 4 G2.

📁 Similar Datasheet

CEM2005 - Dual Enhancement Mode Field Effect Transistor(N and Channel) (Chino-Excel Technology)
CEM2030A - Dual Enhancement Mode Field Effect Transistor(N and P Channel) (Chino-Excel Technology)
CEM2163 - P-Channel 20V MOSFET (VBsemi)
CEM2187 - Dual P-Channel 20V MOSFET (VBsemi)
CEM-1203 - magnetic buzzer (CUI)
CEM1010 - Single N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM3032 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM3252L - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

Other Datasheets by CET

Published: Mar 5, 2012 |