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CEM2539 - Dual Enhancement Mode Field Effect Transistor

Key Features

  • 20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 33mΩ @VGS = 2.5V. -20V, -4.0A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 8 5 G1.
  • 1K G2 S1 D1 7 D2 6 D2 5 S2 1 S1 2 G1 3 S2 4 G2.

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Datasheet Details

Part number CEM2539
Manufacturer CET
File Size 565.96 KB
Description Dual Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM2539 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM2539 D1 D2 FEATURES 20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 33mΩ @VGS = 2.5V. -20V, -4.0A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 8 5 G1 *1K G2 S1 D1 7 D2 6 D2 5 S2 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 20 P-Channel -20 Units V V A A W C ±12 7.5 25 2.