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CEM2108E - Dual N-Channel MOSFET

Key Features

  • 20V, 10A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 19mΩ @VGS = 2.5V. RDS(ON) = 27mΩ @VGS = 1.8V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. D1 D1 D2 D2 8765 SO-8 1 1234 S1 G1 S2 G2.

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Datasheet Details

Part number CEM2108E
Manufacturer CET
File Size 515.95 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet CEM2108E Datasheet

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CEM2108E Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 10A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 19mΩ @VGS = 2.5V. RDS(ON) = 27mΩ @VGS = 1.8V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. D1 D1 D2 D2 8765 SO-8 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@TA = 25 C @TA = 70 C Drain Current-Pulsed a Maximum Power Dissipation@TA = 25 C @TA = 70 C VDS VGS ID IDM PD 20 ±12 10 7.8 40 2.0 1.