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NEC's NPN SILICON TRANSISTOR NE685M13
FEATURES
• NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
0.15+0.1 ñ0.05
0.7±0.05 0.5+0.1 ñ0.05
0.2+0.1 ñ0.05
(Bottom View)
0.3
• •
0.35
1.0+0.1 ñ0.05
0.7
LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz
2
3
Y2
0.35
1
DESCRIPTION
NEC's NE685M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for low voltage/low current designs for portable wireless communications and cellular radio applications.
NE685M13 Datasheet
