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NE68000 - NPN SILICON HIGH FREQUENCY TRANSISTOR

Download the NE68000 datasheet PDF. This datasheet also covers the NE680 variant, as both devices belong to the same npn silicon high frequency transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications.

Both the chip and micro-x versions are suitable for applications up to 6 GHz.

The NE680 die is also available in six different low cost plastic surface mount package styles.

Features

  • HIGH GAIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NE680-CEL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NE68000
Manufacturer CEL
File Size 1.36 MB
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE68000 Datasheet

Full PDF Text Transcription

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NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA.
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