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NE68019 - NPN SILICON HIGH FREQUENCY TRANSISTOR

Download the NE68019 datasheet PDF (NE680 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn silicon high frequency transistor.

Description

The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications.

Both the chip and micro-x versions are suitable for applications up to 6 GHz.

The NE680 die is also available in six different low cost plastic surface mount package styles.

Features

  • HIGH GAIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NE680-CEL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NE68019
Manufacturer CEL
File Size 1.36 MB
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE68019 Datasheet

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Other Datasheets by CEL
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Full PDF Text Transcription

Click to expand full text
NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA.
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