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NE68518 - NPN EPITAXIAL SILICON RF TRANSISTOR

Features

  • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz.
  • Low voltage operation.
  • Low noise and high gain.
  • 4-pin super minimold (18) package.

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Datasheet Details

Part number NE68518
Manufacturer CEL
File Size 1.13 MB
Description NPN EPITAXIAL SILICON RF TRANSISTOR
Datasheet download datasheet NE68518 Datasheet

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Full PDF Text Transcription

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DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) NE68518 / 2SC5015 NPN SILICON RF TRANSISTOR FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low voltage operation • Low noise and high gain • 4-pin super minimold (18) package ORDERING INFORMATION Part Number 2SC5015 2SC5015-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
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