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BCW72 - SILICON PLANAR EPITAXIAL TRANSISTORS

This page provides the datasheet information for the BCW72, a member of the BCW71 SILICON PLANAR EPITAXIAL TRANSISTORS family.

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Part number BCW72
Manufacturer CDIL
File Size 216.34 KB
Description SILICON PLANAR EPITAXIAL TRANSISTORS
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW71 BCW72 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW71 = Kl BCW72 = K2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C IC = 2 mA; VCE = 5 V Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz IC = 10 mA; VCE = 5 V Noise figure at RS = 2 kΩ IC = 200 µA; VCE = 5 V; f = 1 kHz; B = 200 Hz hFE VCB0 VCE0 ICM Ptot Tj BCW71 > 110 < 220 max. max. max. max. max.
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