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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO VEBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, T"a = 25°C Derate above 25°C
PD
Storage Temperature
Tstg
Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 45 50
5.0 100
Max
350 2.8 150 357
Unit Vdc Vdc Vdc
mAdc
Unit
mW
mW/X
°C °C/W
BCW71,72
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage c(l = 2.0 mAdc, Veb = 0)
Collector-Emitter Breakdown Voltage c(l = 2.
BCW72 Datasheet
