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BCW60C - SILICON PLANAR EPITAXIAL TRANSISTORS

This page provides the datasheet information for the BCW60C, a member of the BCW60A SILICON PLANAR EPITAXIAL TRANSISTORS family.

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Datasheet Details

Part number BCW60C
Manufacturer CDIL
File Size 79.00 KB
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BCW60C Datasheet
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Other Datasheets by CDIL
  • BCW60A - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BCW60B - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BCW60D - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BCW61A - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BCW61B - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BCW61C - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BCW61D - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BCW65A - GENERAL PURPOSE TRANSISTOR

Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation Junction temperature Transition frequency at f = 100 MHz VCE = 5 V; IC = 10 mA Noise figure at f = 1 kHz VCE = 5V; IC = 200 mA; B = 200Hz VCES VCE0 IC Ptot Tj fT F max. max. max. max. max. typ. typ.
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