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BCW61A - SILICON PLANAR EPITAXIAL TRANSISTORS

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Part number BCW61A
Manufacturer CDIL
File Size 79.69 KB
Description SILICON PLANAR EPITAXIAL TRANSISTORS
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Other Datasheets by CDIL
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation Junction temperature Transition frequency at f: 100 MHz –VCE = 5 V; –IC = 10 mA Noise figure at f = 1 kHz –VCE = 5 V; –IC = 200 mA –VCES –VCEO –IC Ptot Tj max. max. max. max. max. 32 V 32 V 200 mA 250 mW 150 °C fT typ. 180 MHz F typ.
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