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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW65A, BCW65B BCW65C
GENERAL PURPOSE TRANSISTOR
N–P–N transistor
Marking BCW65A = EA BCW65B = EB BCW65C = EC
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain
–IC = 100 mA; –VCE = 10 V
IC = 10 mA; VCE = 1 V
IC = 100 mA; VCE = 1 V
IC = 500 mA; VCE = 2 V
–VCBO –VCEO –VEBO –IC Ptot hFE
BCW65A 65B
max. 60 60
max. 32 32
max. 5
5
max. 800 800
max 225 225
65C 60 V 32 V 5V 800 mA 225 mW
min.
BCW65B Datasheet
