Download the BC238C datasheet PDF.
This datasheet also covers the BC237 variant, as both devices belong to the same npn silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.
General Description
SYMBOL
Collector Emitter Voltage
VCEO
Collector Emitter Voltage Emitter Base Voltage
VCES VEBO
Collector Current Continuous
IC
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation at Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction Temperature Range
Tj, Tstg
Full PDF Text Transcription for BC238C (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BC238C. For precise diagrams, and layout, please refer to the original PDF.
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CB E BC237,238, A,B,C BC239, B,C TO-92...
View more extracted text
ON PLANAR EPITAXIAL TRANSISTORS CB E BC237,238, A,B,C BC239, B,C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.
BC238C Datasheet
