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BC237 - NPN Silicon Transistor

General Description

SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg

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Datasheet Details

Part number BC237
Manufacturer CDIL
File Size 349.78 KB
Description NPN Silicon Transistor
Datasheet download datasheet BC237 Datasheet

Full PDF Text Transcription for BC237 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BC237. For precise diagrams, and layout, please refer to the original PDF.

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CB E BC237,238, A,B,C BC239, B,C TO-92...

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ON PLANAR EPITAXIAL TRANSISTORS CB E BC237,238, A,B,C BC239, B,C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.