Download the BC237C datasheet PDF.
This datasheet also covers the BC237 variant, as both devices belong to the same npn silicon transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
SYMBOL
Collector Emitter Voltage
VCEO
Collector Emitter Voltage Emitter Base Voltage
VCES VEBO
Collector Current Continuous
IC
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation at Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction Temperature Range
Tj, Tstg
Full PDF Text Transcription for BC237C (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BC237C. For precise diagrams, and layout, please refer to the original PDF.
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CB E BC237,238, A,B,C BC239, B,C TO-92...
View more extracted text
ON PLANAR EPITAXIAL TRANSISTORS CB E BC237,238, A,B,C BC239, B,C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.
BC237C Datasheet
