MS20N04NE - P-Channel MOSFET

Bruckewell

General Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Key Features

Low rDS(on) provides higher efficiency and extends battery life.
High power and current handling capability.
Low side high current DC-DC Converter.

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MS20N04NE p-channel mosfet by Bruckewell - Datasheet Preview

Datasheet Details

Part number	MS20N04NE
Manufacturer	Bruckewell
File Size	179.06 KB
Description	P-Channel MOSFET
Datasheet	MS20N04NE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary MS20N04NE P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.