MS23N18 - N-Channel MOSFET

Bruckewell

General Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Key Features

Low rDS(on) trench technology.
Low thermal impedance.
Fast switching speed.
RoHS compliant package Typical.

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MS23N18 n-channel mosfet by Bruckewell - Datasheet Preview

Datasheet Details

Part number	MS23N18
Manufacturer	Bruckewell
File Size	420.30 KB
Description	N-Channel MOSFET
Datasheet	MS23N18 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MS23N18 N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • RoHS compliant package Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS23N18] © Bruckewell Technology Corporation Rev.