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BS616UV8020 - Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

Description

BS616UV8020 Ultra low operation voltage : 1.8 ~3.6V Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating current 0.4uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.)

Features

  • S Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable.

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Datasheet Details

Part number BS616UV8020
Manufacturer Brilliance Semiconductor
File Size 207.59 KB
Description Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Datasheet download datasheet BS616UV8020 Datasheet

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Part Number Description
BS616UV8021 Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8010 Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable „ DESCRIPTION BS616UV8020 • Ultra low operation voltage : 1.8 ~3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating current 0.4uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=2V -10 100ns (Max.) at Vcc=2V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
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