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BS616UV1610 - Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

Description

The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage.

Features

  • S Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610.

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Datasheet Details

Part number BS616UV1610
Manufacturer Brilliance Semiconductor
File Size 217.31 KB
Description Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit
Datasheet download datasheet BS616UV1610 Datasheet

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BS616UV1620 Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
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Full PDF Text Transcription (Reference)

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BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ DESCRIPTION The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1.2uA and maximum access time of 70/100ns in 2V operation. Easy memory expansion is provided by an active LOW chip enable(CE1), active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616UV1610 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
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