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BS616UV2021 - Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

Description

BS616UV2021 Ultra low operation voltage : 1.8 ~ 3.6V Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.)

Features

  • S Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable.

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Datasheet Details

Part number BS616UV2021
Manufacturer Brilliance Semiconductor
File Size 254.01 KB
Description Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Datasheet download datasheet BS616UV2021 Datasheet

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BS616UV2011 Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616UV2021 • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10 100ns (Max.) at Vcc = 2.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
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