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BS616UV1620 - Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

Description

BS616UV1620 Ultra low operation voltage : 1.8 ~ 2.3V Ultra low power consumption : Vcc = 1.8V C-grade : 25mA (Max.) operating current I- grade : 30mA (Max.) operating current 1.2uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10

Features

  • S Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable.

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Datasheet Details

Part number BS616UV1620
Manufacturer Brilliance Semiconductor
File Size 215.49 KB
Description Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
Datasheet download datasheet BS616UV1620 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable „ DESCRIPTION BS616UV1620 • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 1.8V C-grade : 25mA (Max.) operating current I- grade : 30mA (Max.) operating current 1.2uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10 100ns (Max.) at Vcc = 2.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
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