Datasheet4U Logo Datasheet4U.com

BS616UV8011 - Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit

Description

BS616UV8011 Ultra low operation voltage : 1.8 ~ 2.3V Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc=2V -10 100ns

Features

  • S Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit.

📥 Download Datasheet

Datasheet Details

Part number BS616UV8011
Manufacturer Brilliance Semiconductor
File Size 221.20 KB
Description Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
Datasheet download datasheet BS616UV8011 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BS616LV4017 Very Low Power/Voltage CMOS SRAM 256K X 16 bit BSI
BS600 Water Bath Instruction Manual Yamato
BS6004 PVC Cable Linnet
BS6004 Cable Nexans
BS62LV1605 Very Low Power/Voltage CMOS SRAM 2M X 8 bit Brilliance

Other Datasheets by Brilliance Semiconductor

Part Number Description
BS616UV8010 Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616UV8020 Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021 Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV1010 Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
BS616UV1610 Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit „ DESCRIPTION BS616UV8011 • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=2V -10 100ns (Max.) at Vcc=2V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE2,CE1 and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616UV8011 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 1.
Published: |