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BS616LV8025 - Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

Description

BS616LV8025 Very low operation voltage : 4.5 ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 3uA (Typ.) CMOS standby current High speed access time : -55 55ns (Max.) at Vcc= 5.0V -70 70ns (M

Features

  • S Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable.

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Datasheet Details

Part number BS616LV8025
Manufacturer Brilliance Semiconductor
File Size 207.70 KB
Description Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Datasheet download datasheet BS616LV8025 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable „ DESCRIPTION BS616LV8025 • Very low operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 3uA (Typ.) CMOS standby current • High speed access time : -55 55ns (Max.) at Vcc= 5.0V -70 70ns (Max.) at Vcc= 5.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
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