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BS616LV8011 - Very Low Power/Voltage CMOS SRAM 512K X 16 bit

Description

BS616LV8011 Very low operation voltage : 2.7 ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 40mA (Max.) operating current I-grade : 50mA (Max.) operating current 1uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc=3.0V -10 100ns (M

Features

  • S Very Low Power/Voltage CMOS SRAM 512K X 16 bit.

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Datasheet Details

Part number BS616LV8011
Manufacturer Brilliance Semiconductor
File Size 192.10 KB
Description Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Datasheet download datasheet BS616LV8011 Datasheet

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 16 bit „ DESCRIPTION BS616LV8011 • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 40mA (Max.) operating current I-grade : 50mA (Max.) operating current 1uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=3.0V -10 100ns (Max.) at Vcc=3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1,CE2 and OE options The BS616LV8011 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage.
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