Datasheet4U Logo Datasheet4U.com

BS616LV8012 - Very Low Power/Voltage CMOS SRAM 512K X 16 bit

Description

BS616LV8012 Very low operation voltage : 2.4~5.5V Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) ope

Features

  • S Very Low Power/Voltage CMOS SRAM 512K X 16 bit.

📥 Download Datasheet

Datasheet Details

Part number BS616LV8012
Manufacturer Brilliance Semiconductor
File Size 207.43 KB
Description Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Datasheet download datasheet BS616LV8012 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 16 bit „ DESCRIPTION BS616LV8012 • Very low operation voltage : 2.4~5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 3uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=3V -10 100ns (Max.) at Vcc=3V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
Published: |