Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616LV8012
• Very low operation voltage : 2.4~5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 3uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=3V -10 100ns (Max.) at Vcc=3V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.