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BS616LV8010 - Very Low Power/Voltage CMOS SRAM 512K X 16 bit

Description

BS616LV8010 Vcc operation voltage : 2.7~3.6V Very low power consumption : Vcc = 3.0V C-grade: 30mA (@55ns) operating current I -grade: 31mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade: 25mA (@70ns) operating current 1.5uA (Typ.) CMOS standby curre

Features

  • S Very Low Power/Voltage CMOS SRAM 512K X 16 bit (Single CE Pin).

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Datasheet Details

Part number BS616LV8010
Manufacturer Brilliance Semiconductor
File Size 272.04 KB
Description Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Datasheet download datasheet BS616LV8010 Datasheet

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 16 bit (Single CE Pin) „ DESCRIPTION BS616LV8010 • Vcc operation voltage : 2.7~3.6V • Very low power consumption : Vcc = 3.0V C-grade: 30mA (@55ns) operating current I -grade: 31mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade: 25mA (@70ns) operating current 1.5uA (Typ.) CMOS standby current • High speed access time : -55 55ns -70 70ns • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
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