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BS616LV2025 - Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

Description

BS616LV2025 Very low operation voltage : 4.5 ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade: 40mA (Max.) operating current I -grade: 45mA (Max.) operating current 0.6uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 5.0V -55 55ns

Features

  • S Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable.

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Datasheet Details

Part number BS616LV2025
Manufacturer Brilliance Semiconductor
File Size 253.36 KB
Description Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Datasheet download datasheet BS616LV2025 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616LV2025 • Very low operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 40mA (Max.) operating current I -grade: 45mA (Max.) operating current 0.6uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 5.0V -55 55ns (Max.) at Vcc = 5.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
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