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BS616LV2023 - Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

Description

BS616LV2023 Very low operation voltage : 2.4 ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns

Features

  • S Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable.

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Datasheet Details

Part number BS616LV2023
Manufacturer Brilliance Semiconductor
File Size 249.22 KB
Description Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Datasheet download datasheet BS616LV2023 Datasheet

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Full PDF Text Transcription (Reference)

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616LV2023 • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V •Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
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