BS616LV2010
FEATURES
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
- DESCRIPTION
- Very low operation voltage : 2.7 ~ 3.6V
- Very low power consumption : Vcc = 3.0V C-grade: 25m A (Max.) operating current I-grade: 30m A (Max.) operating current 0.15u A (Typ.) CMOS standby current
- High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V
- Automatic power down when chip is deselected
- Three state outputs and TTL patible
- Fully static operation
- Data retention supply voltage as low as 1.5V
- Easy expansion with CE and OE options
- I/O Configuration x8/x16 selectable by LB and UB pin
The BS616LV2010 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.15u A and maximum access time of 70/100ns in 3V...
