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P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.130 @ VGS = –4.5 V –20
0.190 @ VGS = –2.5 V
ID (A)
–2.3 –1.9
TO-236 (SOT-23)
G1 S2
3D
Top View Si2301DS (A1)* *Marking Code
BM2301
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C TA= 70_C
TA= 25_C TA= 70_C
VDS VGS ID IDM
IS PD TJ, Tstg
–20 "8 –2.3 –1.5 –10 –1.6 1.25 0.8 –55 to 150
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc Notes a.
BM2301 Datasheet
