Datasheet4U Logo Datasheet4U.com

BM2300 - N-Channel Enhancement Mode MOSFET

Description

The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

📥 Download Datasheet

Datasheet preview – BM2300

Datasheet Details

Part number BM2300
Manufacturer Bookly
File Size 291.44 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet BM2300 Datasheet
Additional preview pages of the BM2300 datasheet.

📁 Similar Datasheet

  • BM23 - Bluetooth 4.1 Stereo Audio-Module (ISSC)
  • BM2320-7 - 50 Watt DC-DC Converters (Power-One)
  • BM20 - Bluetooth 4.1 Stereo Audio-Module (ISSC)
  • BM24-10DP - Height Hybrid Power/Signal Connectors (HIROSE)
  • BM24-10DS - Height Hybrid Power/Signal Connectors (HIROSE)
  • BM24-20DP - Height Hybrid Power/Signal Connectors (HIROSE)
  • BM24-20DS - Height Hybrid Power/Signal Connectors (HIROSE)
  • BM24-24DP - Height Hybrid Power/Signal Connectors (HIROSE)
  • BM24-24DS - Height Hybrid Power/Signal Connectors (HIROSE)
  • BM24-30DP - Height Hybrid Power/Signal Connectors (HIROSE)
Other Datasheets by Bookly

Full PDF Text Transcription

Click to expand full text
BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L FEATURE z 20V/6.0A, RDS(ON) = 27mΩ (Typ.) @VGS = 10V z 20V/5.0A, RDS(ON) = 30mΩ @VGS = 4.5V z 20V/4.5A, RDS(ON) = 34mΩ @VGS = 2.5V z 20V/4.0A, RDS(ON) = 40mΩ @VGS = 1.
Published: |