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BM15N10 - 100V N-Channel Enhancement Mode MOSFET

Description

The 15N10 is N channel enhancement mode power effect transitor which is produced using high cell density advanced trench technology.

The high density process is especially able to minize on-state resistance.These devices are.

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Datasheet preview – BM15N10

Datasheet Details

Part number BM15N10
Manufacturer Bookly
File Size 249.42 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet BM15N10 Datasheet
Additional preview pages of the BM15N10 datasheet.

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Full PDF Text Transcription

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100V N-Channel Enhancement Mode MOSFET BM15N10 DESCRIPTION The 15N10 is N channel enhancement mode power effect transitor which is produced using high cell density advanced trench technology. The high density process is especially able to minize on-state resistance.These devices are. especially suited for low voltage application power management DC-DC converters. FEATURE 100V/15 A,RDS(ON)=80.0mΩ (typ.)@VGS=10V 100V/8A, RDS(ON)=115mΩ(typ.)@VGS= 4.5V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS compliance SOP8 ,SOT23 andTO252 package design 100% UIS Tested 100% Rg tested APPLICATIONS Power Management DC/DC Converter Load Switch PIN CONFIGURATION D G S www.bookly.
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