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BM100-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BM100-28 is Designed for high power VHF Applications up to 200 MHz.
FEATURES:
• Common Emitter • PG = 8.5 dB at 20 W/175 MHz • Omnigold™ Metalization System
PACKAGE STYLE .500 6L FLG
MAXIMUM RATINGS
IC VCEO VCES VEBO PDISS TJ TSTG θJC
O O
20 A 33 V 65 V 4.0 V 270 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.65 C/W
O O O O
1 = COLLECTOR
2 = BASE
3&4 = EMITTER
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO hFE CCB PG ηC IC = 50 mA
TC = 25 C
O
NONETEST CONDITIONS
IC = 100 mA IE = 5.0 mA VCE = 5.0 V VVB = 28 V VCC = 28 V POUT = 100 W IC = 1.0 A f = 1.0 MHz f = 175 MHz
MINIMUM TYPICAL MAXIMUM
33 65 4.0 10 200 8.5 60
UNITS
V V V --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
BM100-28 Datasheet
