Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VDSS 600 V
ID(Tc=25℃)
12 A
ID(Tc=100℃)
7.4 A
IDM 48 A
VGSS
±30
V
EAS 870 mJ
EAR
22.5
mJ
IAR 12 A
PD(Tc=25℃)
225 W
TJ,TSTG
-55 to 150 ℃
/Electrical Characteristics(Ta=25℃)
Symbol
Test Conditions
BVDSS
VGS=0V
ID=250μA
IDSS
VDS=600V VDS=480V
VGS=0V TC=125℃
IGSS
VGS=±30V
VDS=0V
VGS(th)
VDS=VGS
ID=250μA
RDS(on)
VGS=10V
ID=6A
gFS
VDS=40V
ID=6A
VSD VGS=0.
Full PDF Text Transcription for CS12N60 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CS12N60. For precise diagrams, and layout, please refer to the original PDF.
BR12N60(CS12N60) N-CHANNEL MOSFET/N MOS : ， PFC 。 Purpose: These devices are well suited for high efficient switched mode power supplies,active power factor correction,el...
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ficient switched mode power supplies,active power factor correction,electronic lamp ballast based on half bridge topology. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 12 A ID(Tc=100℃) 7.4 A IDM 48 A VGSS ±30 V EAS 870 mJ EAR 22.
CS12N60 Datasheet
