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AON6366E - 30V N-Channel MOSFET

General Description

Trench Power AlphaMOS (αMOS LV) technology Low RDS(ON) Optimized for load switch High Current Capability ESD protected RoHS and Halogen-Free Compliant Applications NB Battery Pack Product Summary VDS ID (at VGS=10V) RDS(ON) (at V

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AON6366E 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Optimized for load switch • High Current Capability • ESD protected • RoHS and Halogen-Free Compliant Applications • NB Battery Pack Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 34A < 3.7mΩ < 5.