ƽ VDS (V) = 30 V ƽ IDMAX (at VGS = 10 V) = 150 A ƽ RDS(ON) (at VGS = 10 V) < 1.7 mȍ ƽ RDS(ON) (at VGS = 4.5 V) < 2.4 mȍ S ƽ Low Gate Charge
S ƽ High Current Capability
S
G
DFN5x6-8(PDFNWB5x6-8L)
D D D D
Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
V
VGS
±20
Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche Energy L = 0.05 mH C
TC=25ć
1.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SMD Type
N-Channel MOSFET AON6512 (KON6512)
TraMnOsiSsFtoErsT
Ƶ Features
ƽ VDS (V) = 30 V ƽ IDMAX (at VGS = 10 V) = 150 A ƽ RDS(ON) (at VGS = 10 V) < 1.7 mȍ ƽ RDS(ON) (at VGS = 4.5 V) < 2.4 mȍ S ƽ Low Gate Charge
S ƽ High Current Capability
S
G
DFN5x6-8(PDFNWB5x6-8L)
D D D D
Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
V
VGS
±20
Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche Energy L = 0.05 mH C
TC=25ć
150
ID
TC=100ć
115
IDM
340
A
TA=25ć
54 IDSM
TA=25ć
43
IAS
70
EAS
123
mJ
VDS Spike
100ns
VSPIKE
36
V
Power Dissipation B
TC=25ć
83
PD
TC=100ć
33
Power Dissipation A
TA=25ć TA=70ć
7.4 PDSM
4.
AON6512 Datasheet
