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AON6362 - 30V N-Channel MOSFET

General Description

Trench Power αMOS Technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 60A < 5.2mΩ < 8.6mΩ Applications DC/DC Co

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AON6362 30V N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 60A < 5.2mΩ < 8.