VHB40-28F - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

B .112 x 45° A Ø.125 NOM.

Key Features

Omnigold™ Metalization System C D F E H I.

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VHB40-28F npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	VHB40-28F
Manufacturer	Advanced Semiconductor
File Size	18.00 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	VHB40-28F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VHB40-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • • • Omnigold™ Metalization System C D F E H I MAXIMUM RATINGS IC VCBO VCE0 VEBO PDISS TJ TSTG θ JC O G 5.0 A 65 V 35 V 4.0 V 60 W -65 OC to +200 OC -65 C to +150 C 2.9 OC/W O DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.