VHB40-12F - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The VHB40-12F is Designed for Class C Amplifier Applications in VHF Mobile Radios.

B .112 x 45° A Ø.125 NOM.

Key Features

PG = 9.5 dB Typ. at 40 W /175 MHz.
η C = 60% Typ. at 40 W /175 MHz.
Omnigold™ Metalization System C D.

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VHB40-12F npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	VHB40-12F
Manufacturer	Advanced Semiconductor
File Size	17.95 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	VHB40-12F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VHB40-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The VHB40-12F is Designed for Class C Amplifier Applications in VHF Mobile Radios. PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • PG = 9.5 dB Typ. at 40 W /175 MHz • η C = 60% Typ. at 40 W /175 MHz • Omnigold™ Metalization System C D MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 5.0 A 36 V 18 V 4.0 V 70 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 2.9 OC/W O DIM A B C D F E H I G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 O E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.