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VHB1-28T
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB1-28T is Designed for
PACKAGE STYLE TO-39
B ØA 45° C
FEATURES:
• • • Omnigold™ Metalization System
ØD E
F
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
O
G
H
0.4 A 55 V 30 V 3.5 V 5 W @ TC = 25 C -65 C to +200 C -65 OC to +200 OC 35 OC/W
O O
DIM A B C D E F G H .016 / 0.407 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750 .240 / 6.100 .500 / 12.700 .020 / 0.508 MINIMUM
inches / mm
MAXIMUM
inches / mm
.200 / 5.080 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .260 / 6.600
ORDER CODE: ASI10720
CHARACTERISTICS
SYMBOL
BVCEO BVCER BVCBO BVEBO ICEX ICEO VCE
(S)
TC = 25 C
O
NONETEST CONDITIONS
IC = 5.0 mA IC = 5.0 mA IC = 0.1 mA IE = 0.1 mA VC = 55 V VE = 28 V IC = 100 mA VCE = 5.
VHB1-28T Datasheet
