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VHB10-28S - NPN SILICON RF POWER TRANSISTOR

Description

The ASI VHB10-28S is an NPN power transistor designed for 138-175 MHz VHF communications.

It utilizes emitter ballasting to provide high VSWR handling capability.

Features

  • Common Emitter, 28 V operation.
  • PG = 10 dB at 10W/175 MHz.
  • Omnigold™ Metalization System.
  • High VSWR capability.

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Datasheet Details

Part number VHB10-28S
Manufacturer Advanced Semiconductor
File Size 14.10 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet VHB10-28S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VHB10-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28S is an NPN power transistor designed for 138-175 MHz VHF communications. It utilizes emitter ballasting to provide high VSWR handling capability. FEATURES: • Common Emitter, 28 V operation • PG = 10 dB at 10W/175 MHz • Omnigold™ Metalization System • High VSWR capability MAXIMUM RATINGS IC 1.0 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS TJ 13.0 W -65 °OC to +200 °C TSTG -65 °C to +150 °C θJC 13.5 °C/W PACKAGE STYLE .380 4L STUD .112x45° A B E ØC C E B D #8-32 UNC-2A HI J G F E DIM M IN IM U M inches / mm A .220 / 5.59 B .980 / 24.89 C .370 / 9.40 D .004 / 0.10 E .320 / 8.13 F .100 / 2.54 G .450 / 11.43 H .090 / 2.29 I .155 / 3.94 J MAXIMUM inches / mm .230 / 5.84 .385 / 9.78 .
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