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VHB10-12F - NPN SILICON RF POWER TRANSISTOR

Description

B .112 x 45° A Ø.125 NOM.

Features

  • Omnigold™ Metalization System.

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Datasheet Details

Part number VHB10-12F
Manufacturer Advanced Semiconductor
File Size 17.79 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet VHB10-12F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VHB10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O C D F E H I 2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 8.8 OC/W O O O DIM A B C D E F G H I J G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .004 / 0.10 .085 / 2.16 .160 / 4.06 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .240 / 6.10 .255 / 6.
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