VHB125-28 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI VHB125-28 is Designed for PACKAGE STYLE .500 6L FLG C A 2x ØN FULL R D

Key Features

Omnigold™ Metalization System B E .725/18,42 F K M L.

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VHB125-28 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	VHB125-28
Manufacturer	Advanced Semiconductor
File Size	17.96 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	VHB125-28 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is Designed for PACKAGE STYLE .500 6L FLG C A 2x ØN FULL R D FEATURES: • • • Omnigold™ Metalization System B E .725/18,42 F K M L MAXIMUM inches / mm MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O G 20 A DIM H MINIMUM inches / mm J I 65 V 36 V 65 V 4.0 V 270 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 0.65 OC/W O O O A B C D E F G H I J K L M N .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .120 / 3.05 .135 / 3.