Datasheet4U Logo Datasheet4U.com

BLX93A - NPN SILICON RF POWER TRANSISTOR

Description

The ASI BLX93A is Designed for transmitting applications in class-A, B or C with a supply voltage up to 28 V PACKAGE STYLE .280 4L STUD A 45° C

Features

  • High Gain - 9.0 dB.
  • Omnigold™ Metallization System.
  • Common Emitter B E B D C E J E F G I.

📥 Download Datasheet

Datasheet Details

Part number BLX93A
Manufacturer Advanced Semiconductor
File Size 14.51 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet BLX93A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLX94C UHF power transistor NXP
BLX25 Pro-Electron Power Transistors Solitron Devices
BLX65S NPN SILICON HIGH FREQUENCY TRANSISTOR ASI
BLX67 UHF/VHF Power Transistor Philips
BLX69A UHF Power Transistor Philips

Other Datasheets by Advanced Semiconductor

Part Number Description
BLX92A NPN SILICON RF POWER TRANSISTOR
BLX94A NPN RF POWER TRANSISTOR
BLX96 NPN SILICON RF POWER TRANSISTOR
BLX14 NPN SILICON RF POWER TRANSISTOR
BLX15 NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLX93A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLX93A is Designed for transmitting applications in class-A, B or C with a supply voltage up to 28 V PACKAGE STYLE .280 4L STUD A 45° C FEATURES: • High Gain - 9.0 dB • Omnigold™ Metallization System • Common Emitter B E B D C E J E F G I MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 1.0 A 65 V 12.5 W @ TC = 25 °C -65 to +200 °C -65 to +150 °C 9.8 °C/W DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 MINIMUM inches / mm H K #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .640 / 16.26 .217 / 5.51 .285 / 7.
Published: |