Datasheet4U Logo Datasheet4U.com

BLX65S - NPN SILICON HIGH FREQUENCY TRANSISTOR

Description

The ASI BLX65S is Designed for 12.5 V Class C Amplifier Applications in the 100 to 500 MHz Frequency Range.

📥 Download Datasheet

Datasheet Details

Part number BLX65S
Manufacturer ASI
File Size 58.22 KB
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet BLX65S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLX67 UHF/VHF Power Transistor Philips
BLX69A UHF Power Transistor Philips
BLX14 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLX15 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLX25 Pro-Electron Power Transistors Solitron Devices

Other Datasheets by ASI

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ASI BLX65S NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The ASI BLX65S is Designed for 12.5 V Class C Amplifier Applications in the 100 to 500 MHz Frequency Range. PACKAGE STYLE TO-39 FEATURES INCLUDE: • Economical TO-39 Package • 8 dB Typical Gain • Emitter Ballasting MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC O O 750 mA 36 V 5.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 35 C / W O O O O 1 = EMITTER 2 = BASE 3 = COLLECTOR (CASE) CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB GPE ηC IC = 50 mA IC = 50 mA IE = 1.0 mA VCB = 15 V VCB = 5.0 V TA = 25 C O NONE TEST CONDITIONS MINIMUM 16 36 2.5 TYPICAL MAXIMUM UNITS V V V 1.0 IC = 50 mA f = 1.0 MHz POUT = 2.0 W f = 470 MHz 7.0 55 20 15 200 mA --pF dB % VCB = 12.5 V VCE = 12.
Published: |