Datasheet4U Logo Datasheet4U.com

BLX94C - UHF power transistor

Description

DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for class-A, B or C operation.

The transistor is encapsulated in a 4-lead SOT122A stud envelope with a ceramic cap.

Fig.1 Simplified outline and symbol.

Features

  • Withstands full load mismatch.
  • Emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLX94A NPN RF POWER TRANSISTOR Advanced Semiconductor
BLX92A NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLX93A NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLX96 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLX14 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor FEATURES • Withstands full load mismatch • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Transmitting applications in the UHF range with a nominal supply voltage up to 28 V. PINNING - SOT122A PIN 1 2 3 4 SYMBOL c e b e emitter base emitter DESCRIPTION collector 2 MAM229 BLX94C DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for class-A, B or C operation. The transistor is encapsulated in a 4-lead SOT122A stud envelope with a ceramic cap. handbook, halfpage 4 c 1 3 b e Fig.1 Simplified outline and symbol.
Published: |