AP2625Y
Description
D1
G2 S1
D2 S2
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is universally used for all mercial-industrial applications.
BVDSS RDS(ON) ID
-30V 135mΩ
- 2.3A
D2 S1
D1
SOT-26
G2 S2 G1
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
Rating -30 ±12 -2.3 -2 -20 1.2 0.01
-55 to 150 -55 to 150
Units V V A A A W
W/℃ ℃ ℃
Max.
Value 110
Unit ℃/W
Data and specifications subject to change without notice
Electrical Characteristics@Tj=25o C(unless otherwise specified)
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