AP2625GY
Description
D1
G2 S1
D2 S2
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for mercial-industrial applications.
BVDSS RDS(ON) ID
-30V 185mΩ
- 2A
D2 S1
D1
SOT-26
G2 S2 G1
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Rating -30 ±12 -2.0 -1.6 -20 1.2 0.01
-55 to 150 -55 to 150
Value 110
Units V V A A A W
W/℃ ℃ ℃
Unit ℃/W
Data and specifications subject to change without notice
201023073-1/4
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol
Par...
