AP2622GY
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is universally used for all mercial-industrial applications.
BVDSS RDS(ON) ID
50V 1.8Ω 520m A
D2 S1
D1
SOT-26
G2 S2 G1
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
Rating 50 ±20 520 410 1.5 0.8
0.006 -55 to 150 -55 to 150
Units V V m A m A A W
W/℃ ℃ ℃
Max.
Value 150
Unit ℃/W
Data and specifications subject to change without notice
200624051-1/4
Electrical Characteristics@Tj=25o C(unless otherwise...
